業績

【原著論文】

[2016]

Akira Sasahara and Masahiko Tomitori: “An atomic scale study of TiO2(110) surfaces exposed to humid environments”, J. Phys. Chem. C (2016) in press.

Takashi Nishimura and Masahiko Tomitori: “Local protrusions formed on Si(111) surface by surface melting and solidification under applied tensile stress”, Applied Physics Letters 109 (2016) 121601 (4 pages). DOI: 10.1063/1.4963020 　

M. Nogami, A. Sasahara, T. Arai and M. Tomitori: Atomic-scale electric capacitive change detected with a charge amplifier installed in a non-contact atomic force microscope, Applied Physics Express 9 (2016) 046601-1 ― 046601-4 (4 pages), selected as Spotlights. DOI: 10.7567/APEX.9.046601

H. Ooe, M. Fujii, M. Tomitori and T. Arai: Evaluation and optimization of quartz resonant-frequency retuned fork force sensors with high Q factors, and the associated electric circuits, for non-contact atomic force microscopy, Review of Scientific Instruments 87 (2016) 023702. (8 pages). DOI: 10.1063/1.4941065.

[2015]

T. Miyagi, A. Sasahara and M. Tomitori: Difference in etching of Si(111) and (001) surfaces induced by atomic hydrogen irradiation observed with non-contact atomic force microscopy, Jpn. J. Appl. Phys. 54 (2015) 08LB08-1 - 08LB08-5. DOI: 10.7567/JJAP.54.08LB08.

T. Miyagi, A. Sasahara and M. Tomitori: Water wettability of Si(111) and (001) surfaces prepared to be reconstructed, atomic-hydrogen terminated and thinly oxidized in an ultrahigh vacuum chamber, Appl. Surf. Sci. 349 (2015) 904-910. DOI: 10.1016/j.apsusc.2015.04.176.

A. Sasahara, T. Murakami and M. Tomitori: Hydration of MgO(100) surface promoted at <011> steps, J. Phys. Chem. C 119 (2015) 8250-8257. DOI: 10.1021/acs.jpcc.5b01759.

T. Arai, M. Koshioka, K. Abe, M. Tomitori, R. Kokawa, M. Ohta, H. Yamada, K. Kobayashi and N. Oyabu: Atom-resolved analysis of an ionic KBr(001) crystal surface covered with a thin water layer by frequency modulation atomic force microscopy, Langmuir 31 (13) (2015) 3876-3883. DOI: 10.1021/acs.langmuir.5b00087.

[2014]

T. Nishimura, A. Sasahara, H. Murata, T. Arai and M. Tomitori: Thermal transformation of 4,4”-diamino-p-terphenyl on a Si(111)-7×7 surface analyzed by X-ray photoemission spectroscopy and scanning tunneling microscopy, J. Phys. Chem. C 118 (43) (2014) 25104-25109. DOI: 10.1021/jp508680a.

A. M. A. Hassan, T. Nishimura, A. Sasahara, H. Murata and M. Tomitori: Stable alignment of 4,4”-diamino-p-terphenyl chemically adsorbed on a Si(001)-(2×1) surface observed by scanning tunneling microscopy, Surf. Sci. 630 (2014) 96-100. DOI: 10.1016/j.susc.2014.07.018.

H. Ooe, T. Sakuishi, M. Nogami, M. Tomitori and T. Arai: Resonance frequency-retuned quartz tuning fork as a force sensor for noncontact atomic force microscopy, Appl. Phys. Lett. 105 (2014) 043107 (4 pages). DOI: 10.1063/1.4891882.

[2013]

T. T. U. Le, A. Sasahara and M. Tomitori: Water wettability of an ultrathin layer of silicon oxide epitaxially grown on a rutile titanium dioxide (110) surface, J. Phys. Chem. C 117 (2013) 23621-23625. DOI: 10.1021/jp403601m.

T. Nishimura, A. M. A. Hassan and M. Tomitori: Electrochemical etching of metal wires in low-stress electric contact using a liquid metal electrode to fabricate tips for scanning tunneling microscopy, Appl. Surf. Sci. 284 (2013) 715-719. DOI: 10.1016/j.apsusc.2013.07.160.

A. Sasahara and M. Tomitori: XPS and STM study of Nb-doped TiO2 (110)-(1×1) surfaces, J. Phys. Chem. C 117 (34) (2013) 17680-17686. DOI: 10.1021/jp4057576.

H. Tatsumi, A. Sasahara and M. Tomitori: Adsorption of propylene carbonate molecules on a TiO2(110) surface, J. Phys. Chem. C 117 (20) (2013) 10410－10416. DOI: 10.1021/jp312666z.

[2012]

H. Tatsumi, A. Sasahara and M. Tomitori: Lateral distribution of Li atoms at the initial stage of adsorption on TiO2(110) surface, J. Phys. Chem. C 116 (25) (2012) 13688-13692. DOI: 10.1021/jp303555s.

Y. Jeong, M. Hirade, R. Kokawa, H. Yamada, K. Kobayashi, N. Oyabu, T. Arai, A. Sasahara and M. Tomitori: Local interaction imaging by SiGe quantum dot probe, Current Appl. Phys. 12 (2012) 581-584.

[65] Z.A. Ansari, T. Arai and M. Tomitori: "Low-flux elucidation of initial growth of Ge clusters deposited on Si(111)-7x7 observed by scanning tunneling microscopy", Phys. Rev. B 79 (2009) 033302-1 ? 033302-4.
[64] Z.A. Ansari, T. Arai and M. Tomitori: "Atomic force microscope Si tip with Ge clusters with the capability of remoulding by heating", Nanotechnology 18 (2007) 084020, 6pp.
[63] Z.A. Ansari, T. Arai and M. Tomitori: "Evidence of temperature dependence of initial adsorption sites of Ge atoms on Si(111)-7x7", Appl. Phys. Lett. 88 (2006) 171902-1 ? 171902-3.
[62] M. Hirade, T. Arai and M. Tomitori: "Energy spectra of electrons backscattered from sample surfaces with hetero structures using field emission scanning tunneling microscopy", Jpn. J. Appl. Phys. 45 (3B) (2006) 2278-2282.
[61] T. Arai and M. Tomitori: "Electric conductance through chemical bonding states being formed between a Si tip and a Si(111)-7x7 surface by bias-voltage noncontact atomic force spectroscopy", Phys. Rev. B 73 (2006) 073307-1 ? 073307-4.
[60] T. Arai and M. Tomitori: "A Si nanopillar grown on a Si tip by atomic force microscopy in ultrahigh vacuum for a high-quality scanning probe", Appl. Phys. Lett. 86 (2005) 073110-1 ? 073110-3.
[59] Z.A. Ansari, T. Arai and M. Tomitori: "Hexagonal arrangement of Ge clusters self-organized on a template of half unit cells of Si(111)-7x7 observed by scanning tunneling microscopy", Surf. Sci. Lett. 574 (2005) L17-L22.
[58] T. Arai and M. Tomitori: "Observation of electronic states on Si(111)-7x7 through short-range attractive force with noncontact atomic force spectroscopy", Phys. Rev. Lett. 93 (2004) 256101-1 ? 256101-4.
[57] M. Hirade, T. Arai and M. Tomitori: "Detection improvement for electron energy spectra for surface analysis using a field emission scanning tunneling microscope", Jpn. J. Appl. Phys. 42 Pt. 1 (7B) (2003) 4837-4840.
[56] M. Gauthier, R. Perez, T. Arai, M. Tomitori and M. Tsukada: "Interplay between nonlinearity, scan speed, damping, and electronics in frequency modulation atomic force microscopy", Phys. Rev. Lett. 89 (2002) 146104-1 - 146104-4.
[55] M. Tomitori, M. Hirade, Y. Suganuma and T. Arai: "Surface spectroscopy utilizing field electron emission from thermal-field treated tips in STM", J. Surf. Analysis 9 (2002) 359-364.
[54] T. Arai and M. Tomitori: "Germanium islands grown on a Si(111)7x7 surface observed by noncontact atomic force microscopy with simultaneous imaging on damping", Appl. Surf. Sci. 188 (2002) 292-300.
[53] T. Arai, M. Tomitori, M. Saito and E. Tamiya: "DNA molecules sticking on a vicinal Si(111) surface observed by noncontact atomic force microscopy", Appl. Surf. Sci. 188 (2002) 474-480.
[52] M. Tomitori, M. Hirade, Y. Suganuma and T. Arai: "An applicability of scanning tunneling microscopy for surface electron spectroscopy", Surf. Sci. 493 (2001) 49-55.
[51] T. Arai and M. Tomitori: "Simultaneous imaging of tunneling current and damping energy by noncontact-AFM in ultrahigh vacuum", Appl. Phys. A 72 (2001) S51-S54.
[50] T. Arai and M. Tomitori: "Simultaneous imaging of tunneling current variation by noncontact atomic force microscopy in ultrahigh vacuum", Jpn. J. Appl. Phys. 39 Pt. 1 (6B) (2000) 3753-3757.
[49] Y. Suganuma and M. Tomitori: "Evaluation of an electric field over sample surfaces by electron standing waves in a vacuum gap of scanning tunneling microscopy", Jpn. J. Appl. Phys. 39 Pt. 1 (6B) (2000) 3758-3760.
[48] T. Arai and M. Tomitori: "AFM tip sharpening and evaluation by electric field confinement using a metal grid approached to the tip", J. Vac. Sci. Technol. B 18 (2000) 648-652.
[47] Y. Suganuma and M. Tomitori: "Analysis of electron standing waves in a vacuum gap of scanning tunneling microscopy: measurement of band bending through energy shifts of electron standing wave ", J. Vac. Sci. Technol. B 18 (2000) 48-54.
[46] T. Arai and M. Tomitori: "Bias dependence of Si(111)7x7 images observed by noncontact atomic force microscopy ", Appl. Surf. Sci. 157 (2000) 207-211.
[45] Y. Suganuma and M. Tomitori: "Tunneling condition dependence of electron standing waves in vacuum gaps on gold (111) and silicon (001) observed by scanning tunneling microscopy", Surf. Sci. 438 (1999) 311-318.
[44] T. Arai and M. Tomitori: "Interaction measurements between a tip and a sample in proximity regions controlled by tunneling current in a UHV STM-AFM ", Appl. Surf. Sci. 144-145 (1999) 501-504.
[43] M. Tomitori, H. Terai and T. Arai: "Energy spectrum of backscattered electrons excited by a field emission STM with a build-up [111]-oriented W tip ", Appl. Surf. Sci. 144-145 (1999) 123-127.
[42] M. Tomitori and T. Arai: "Tip cleaning and sharpening processes for noncontact AFM in UHV ", Appl. Surf. Sci. 140 (1999) 432-438.
[41] Y. Suganuma and M. Tomitori: "Differential conductance imaging of Si and Ge Islands deposited on Si(001) by scanning tunneling microscopy ", Jpn. J. Appl. Phys. 37 Pt. 1 (6B) (1998) 3789-3792.
[40] T. Arai and M. Tomitori: "Removal of contamination and oxide layers from UHV-AFM tips", Appl. Phys. A 66 (1998) S319-323.
[39] T. Arai and M. Tomitori: "Scanning Auger electron microscopy evaluation and composition control of cantilevers for ultrahigh vacuum atomic force microscopy", Jpn. J. Appl. Phys. 36 Pt. 1 (6B) (1997) 3855-3859.
[38] M. Nagai, M. Tomitori and O. Nishikawa: "Sharpening processes of scanning tunneling microscopy/ scanning tunneling spectroscopy tips by thermal field treatment ", Jpn. J. Appl. Phys. 36 Pt. 1 (6B) (1997) 3844-3849.
[ 37] K. Hasebe, H. Mori, M. Tomitori, T. Keii and M. Terano: "Titanium distribution on the surface of Ziegler-Natta catalysts observed by scanning Auger electron microscopy ", J. Molecular Catalysis A: Chemical 115 (1997) 259-263.
[36] Y. Naitoh, K. Takayanagi and M. Tomitori: "Visualization of tip-surface geometry at atomic distance by TEM-STM holder", Surf. Sci. 357/358 (1996) 208-212.
[35] M. Tomitori, K. Sugata, G. Okuyama and H. Kimata: "Reproducibility of scanning tunneling spectroscopy of Si(111)7x7 using a build-up tip ", Surf. Sci. 355 (1996) 21-30.
[34] M. Ashino, M. Tomitori and O. Nishikawa: "Atom probe and field emission electron spectroscopy studies of semiconductor films on metals ", Appl. Surf. Sci. 87/88 (1995) 12-17.
[33] S. Wakabayashi, H. Kato, M. Tomitori and O. Nishikawa:"Scanning tunneling microscopy/spectroscopy studies of conducting polymer polypyrrole ", J. Appl. Phys. 76 (1994) 5595-5597.
[32] M. Tomitori, K. Watanabe, M. Kobayashi and O. Nishikawa: "STM study of the Ge growth mode on Si(001) substrates ", Appl. Surf. Sci. 76/77 (1994) 322-328.
[31] M. Tomitori, K. Watanabe, M. Kobayashi, F. Iwawaki and O. Nishikawa: "Layered heteroepitaxial growth of germanium on Si(015) observed by scanning tunneling microscopy ", Surf. Sci. 301 (1994) 214-222.
[30] M. Tomitori, K. Watanabe, M. Kobayashi and O. Nishikawa: "Scanning tunneling microscopy / scanning tunneling spectroscopy study of Ge and Si dimers on Si substrates ", J. Vac. Sci. Technol. B 12 (1994) 2022-2025.
[29] A. Ikai, K. Imai, K. Yoshimura, M. Tomitori, O. Nishikawa, R. Kokawa, M. Kobayashi and M. Yamamoto: "Scanning tunneling microscopy/atomic force microscopy studies of bacteriophage T4 and its tail fibers ", J. Vac. Sci. Technol. B 12 (1994) 1478-1481.
[28] M. Ashino, M. Tomitori and O. Nishikawa: "Atom-probe and field emission electron spectroscopy studies of ordered structures and electronic properties of Ge overlayers on Ir-tips ", Appl. Surf. Sci. 76/77 (1994) 291-296.
[27] K. Imai, K. Yoshimura, M. Tomitori, O. Nishikawa, R. Kokawa, M. Yamamoto, M. Kobayashi and A. Ikai: "Scanning tunneling and atomic force microscopy of T4 bacteriophage and tobacco mosaic virus ", Jpn. J. Appl. Phys. 32 (1993) 2962-2964.
[26] M. Salmeron, G. Neubauer, A. Folch, M. Tomitori, D. F. Ogletree and P. Sautet: "Viscoelastic and electrical properties of self-assembled monolayers on Au(111) films ", Langmuir 9 (1993) 3600-3611.
[25] M. Ashino, M. Tomitori and O. Nishikawa: "Atom-probe and field emission electron microscope studies of Ge on Ir ", Appl. Surf. Sci. 67 (1993) 43-47.
[24] F. Iwawaki, M. Tomitori and O. Nishikawa: "STM study of initial stage of Ge epitaxy on Si(001) ", Ultramicroscopy 42-44 (1992) 902-909.
[23] F. Iwawaki, M. Tomitori and O. Nishikawa: "STM study of Ge overlayers on Si(001) ", Surf. Sci. 266 (1992) 285-288.
[22] F. Iwawaki, H. Kato, M. Tomitori and O. Nishikawa: "STM study of geometric and electronic structures of Ge dimers on Si(001) ", Ultramicroscopy 42-44 (1992) 895-901.
[21] O. Nishikawa, M. Tomitori and F. Iwawaki: "High resolution tunneling microscopies: from FEM to STS ", Surf. Sci. 266 (1992) 204-213.
[20] M. Salmeron, A. Folch, G. Neubauer, M. Tomitori, D. F. Ogletree and W. Kolbe: "Nanometer scale mechanical properties of Au(111) thin films ", Langmuir 8 (1992) 2832-2842.
[19] F. Iwawaki, M. Tomitori and O. Nishikawa: "STM study of epitaxial growth of Ge on Si(001) ", Surf. Sci. Lett. 253 (1991) L411-L416.
[18] F. Iwawaki, M. Tomitori and O. Nishikawa: "Scanning tunneling microscopy/ scanning tunneling spectroscopy observation of step structures of Si(001) and (111) surfaces ", J. Vac. Sci. Technol. B 9 (1991) 711-715.
[17] O. Nishikawa, H. Koyama, M. Tomitori and F. Iwawaki: "Tunneling characteristics of silicon covered molybdenum tip apex ", J. Vac. Sci. Technol. B 9 (1991) 789-793.
[16] O. Nishikawa, M. Tomitori and F. Iwawaki: "Atomic configurations of tip apexes and scanning tunneling microscopy-spectroscopy ", Mater. Sci. Eng. B 8 (1991) 81-97.
[15] O. Nishikawa, H. Koyama and M. Tomitori: "Work function, field emitted electron energy spectrum and surface composition of silicon covered molybdenum ", Surf. Sci. 246 (1991) 201-204.
[14] M. Tomitori, N. Hirano, F. Iwawaki, Y. Watanabe, T. Takayanagi and O. Nishikawa: "Elaboration and evaluation of tip manipulation of scanning tunneling microscopy ", J. Vac. Sci. Technol. A 8 (1990) 425-428.
[13] O. Nishikawa, M. Tomitori, F. Iwawaki and N. Hirano: "Correlation between scanning tunneling microscopy/spectroscopy images and apex profiles of scanning tips ", J. Vac. Sci. Technol. A 8 (1990) 421-424.
[12] M. Tomitori, F. Iwawaki, N. Hirano, F. Katsuki and O. Nishikawa: "Corrugation of Si surfaces and profiles of tip apexes ", J. Vac. Sci. Technol. A 8 (1990) 222-225.
[11] O. Nishikawa, H. Koyama, N. Kodama and M. Tomitori: "The atom-probe with a field emission electron spectrometer ", Colloq. de Phys. 50 (1989) C8-507 - C8-512.
[10] O. Nishikawa, M. Tomitori, F. Iwawaki and F. Katsuki: "Image quality of STM and apex profile of a scanning tip ", Colloq. de Phys. 50 (1989) C8-217 - C8-222.
[9] M. Tomitori, F. Katsuki and O. Nishikawa: "STM study of the effects of pulsed laser irradiation on semiconductor surfaces ", J. Microscopy 152 (1988) 337-345.
[8] O. Nishikawa and M. Tomitori: "Scanning tunneling microscopy study of conductive ceramics ", J. Vac. Sci. Technol. A 6 (1988) 454-456.
[7] O. Nishikawa, M. Tomitori and F. Katsuki: "Arrangement and stability of atoms at the apex of a scanning tip ", J. Microscopy 152 (1988) 637-641.
[6] O. Nishikawa, K. Hattori, F. Katsuki and M. Tomitori: "Field ion microscope and atom-probe studies of scanning tunneling microscope tips ", J. de Phys. 49 (1988) C6-55 - C6-59.
[5] O. Nishikawa, M. Tomitori and A. Minakuchi: "Piezoelectric and electrostrictive ceramics for STM ", Surf. Sci. 181 (1987) 210-215.
[4] M. Tomitori, M. Kuriki and S. Hayakawa: "DLTS study of heat treatments on n-CdTe crystals ", Jpn. J. Appl. Phys. 26 (1987) 588-591.
[3] O. Nishikawa, K. Oida and M. Tomitori: "Atom-probe mass analysis with a signal height discriminating timer ", J. de Phys. 47 (1986) C7-515 -C7-520.
[2] M. Tomitori, S. Ishii, M. Kuriki and S. Hayakawa: "DLTS study on the gradation of the trap concentration profiles in n-CdTe crystals ", Jpn. J. Appl. Phys. 24 (1985) 1488-1492.
[1] M. Tomitori, M. Kuriki, S. Ishii, S. Fuyuki and S. Hayakawa: "DLTS study of pulsed ruby laser irradiation effects on n-CdTe ", Jpn. J. Appl. Phys. 24 (1985) L329-L331.

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【レビュー】

[1] M. Tomitori and T. Arai: “Germanium nanostructures on silicon observed by scanning probe microscopy”, MRS Bulletin 29 (7) (2004) 484-487.

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【国際会議論文】

[6] T. Arai and M. Tomitori: "In-situ preparation of noncontact AFM tips for surface force spectroscopy", the proceedings of 8th Asia-Pacific conference on electron microscopy (8APEM), June 7-11, 2004, Kanazawa, Japan, pp. 204-205 (2004).
[5] M. Hirade, T. Arai and M. Tomitori: "Angle dependence of backscattered electrons in field emission STM", the proceedings of 8th Asia-Pacific conference on electron microscopy (8APEM), June 7-11, 2004, Kanazawa, Japan, pp. 214-215 (2004).
[4] M. Tomitori and T. Arai: "Simultaneous measurements of surface topography and damping energy by noncontact atomic force microscopy", the proceedings of 7th world multiconference on systemics, cybernetics and informatics (SCI2003), July 27-30, 2003, Orlando, Florida, USA, Vol. VIII, pp. 319-323 (2003).
[3] M. Tomitori and T. Arai: "Applicability and limitation of scanning probe microscopies for catalytic materials", edited by M. Terano and N. Otsuka, pp. 138-145 (2001) (Technology and Educations Publishers, Tokyo).
[2] O. Nishikawa, M. Tomitori and F. Iwawaki: "Effect of tip apex on STM and STS ", Ordering at surfaces and interfaces, Springer series in materials science Vol.17, ed. A. Yoshimori, T. Shinjo and H. Watanabe (Springer-Verlag, Heidelberg, 1992) p. 39-46.
[1] O. Nishikawa, M. Tomitori and F. Iwawaki: "Ultramicroanalysis utilizing electron tunneling ", Anal. Sci. 7 Suppl. (1991) 1225-1230.

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【学会邦誌論文】

[10] 富取正彦、新井豊子：研究紹介 "走査型プローブ顕微鏡にみる電圧印加のナノ力学的相互作用"、表面科学 29 (4) (2008) 239-245.
[09] 富取正彦、新井豊子：最近の研究と技術 "電圧印加非接触原子間力顕微鏡法を利用した探針?試料間の相互作用力分光法"、顕微鏡 40 (3) (2005) 193-195.
[8] 富取正彦、新井豊子：基礎講座"〈トンネル顕微鏡関連技術の基礎〉装置・手法としての可能性と限界"、応用物理 69 (4) 　(2000) 435 - 438．
[7] 富取正彦："STM/STSと走査探針"、電子顕微鏡 34 (2) (1999) 147-149．
[6] 富取正彦："走査型トンネル顕微鏡と関連技術"、ぶんせき 5 (1998) 358-363． [05]富取正彦："超高真空STMで安定な原子像を得るためには？?試作と実験のノウハウ (I),(II)"、表面科学17 (5,6) (1996) 286-289, 352-355．
[4] 富取正彦："Si上のGe"、日本結晶学会誌 35 (2) (1993) 117-119．
[3] 富取正彦、西川治："超高真空仕様の走査型トンネル顕微鏡"、応用物理 61 (3) (1992) 279-280．
[2] 富取正彦、岩脇文和、西川治："Si表面のSTS"、日本物理学会誌 46 (4) (1991) 293-295．
[1] 富取正彦、西川治："STMによる半導体表面の観察と探針評価"、応用物理 57 (12) (1988) 1907-1911．

TOPﾍﾟｰｼﾞへ戻る

【著作】

[19] 富取正彦、新井豊子（分担執筆）：実験物理科学シリーズ６　"走査プローブ顕微鏡「発展編　第10章　非接触AFMの展開」"、pp. 357-363、重川秀美、吉村雅満、河津璋編　(2009)（共立出版）．
[18] 富取正彦（分担執筆）："ナノテクノロジー入門シリーズ第3巻　極限微小系のナノ物性測定 Chap. 5 走査型トンネル顕微鏡 (STM)"、pp. 87-99 (2007)（共立出版）．
[17] 富取正彦（分担執筆）："ナノテクノロジー入門シリーズ第4巻　基礎装置工学・試料作製技術 Chap. 4 真空工学"、pp. 65-93 (2007)（共立出版）．
[16] 富取正彦（分担執筆）："表面物性工学ハンドブック　第２版　第６章 SPM　6.2 STM　6.2.2　装置と測定法、6.2.3　観察例１"、(2007)（丸善）．
[15] 富取正彦（分担執筆）："走査型プローブ顕微鏡　最新技術と未来予測 2.1 走査型トンネル顕微鏡(STM)"、pp. 7-14；長谷川修司、富取正彦（分担執筆）： 5.2 半導体材料の評価"、pp. 139-143、森田清三編 (2005)（丸善）．
[14] 富取正彦、新井豊子（分担執筆）："実践ナノテクノロジー　走査プローブ顕微鏡と局所分光　第4章力学的分光 4.4散逸・非保存力測定"、pp. 196-207 (2005)（裳華房）．
[13] 富取正彦（分担執筆）："第18回大学と科学　極微な力で拓くナノの世界　?原子・分子のナノ力学最前線?　ナノ世界における静電気力とエネルギー損失"、pp. 37-49 (2004)（クバプロ）．
[12] 富取正彦（分担執筆）："新訂版・表面科学の基礎と応用　「第４章表面分析法　　第５節ナノプローブ法　1 電界放射顕微鏡(FEM)」"、日本表面科学会編　岩澤康裕編　 pp. 806-808 (2004)（エヌ・ティー・エス）．
[11] 富取正彦、新井豊子（分担執筆）："原子分子のナノ力学　２章 2.3　ダンピングの測定方法 p. 22-26、2.7　NC-AFM/STM同時測定 pp. 42-45、４章　半導体のナノ力学的複合測定 pp. 93-103"、(2003)（丸善）．
[10] 富取正彦（分担執筆）："表面分析技術選書　ナノテクノロジーのための走査プローブ顕微鏡　3. 装置と実験方法　3.1 走査トンネル顕微鏡"、日本表面科学会編、pp. 29-40 (2002)（丸善）．
[9] 富取正彦（分担執筆）："応用物理ハンドブック　「電界蒸発」"、応用物理学会編pp. 331-332 (2002)（丸善）．
[8] 徳本洋志、富取正彦（分担執筆）："走査型プローブ顕微鏡　基礎と未来予想 2.8 原子・分子の同定・識別"、森田清三編　pp. 78-82 (2000)（丸善）
[7] 富取正彦（分担執筆）："図解・薄膜技術　第３章３.８原子操作"、真下正夫、畑朋延、小島勇夫編　(1999)（培風館）．
[6] 富取正彦（分担執筆）："走査型プローブ顕微鏡　STMからSPMへ　第４章トンネル顕微鏡のメカニズムと像の評価"、西川治編　pp. 121-131 (1998)（丸善）．
[5] 富取正彦（分担執筆）："表面の構造解析「第５章　走査トンネル顕微鏡による表面の観察」"、表面科学シリーズ第３巻、八木克道編　pp. 174-203　(1998)（丸善）．
[4] 富取正彦、西川治（分担執筆）："ミクロの世界・物質編　目でみる物性論"、（社）日本電子顕微鏡学会編　pp. 396-397、(1997)（学際企画）．
[3] 西川治、富取正彦（分担執筆）："ＳＴＭによる薄膜成長の観察"、結晶成長ハンドブック、日本結晶成長学会編　pp. 1088-1090、(1995)（共立出版）．
[2] 富取正彦（分担執筆）："アトムプローブ電界イオン顕微鏡"、表面分析図鑑　日本表面学会編　pp. 26-27、(1994)（共立出版）．
[1] 富取正彦（分担執筆）："Si上のGe膜の成長過程"、走査型トンネル顕微鏡／原子間力顕微鏡利用技術集成、ナノ表面研究会編 pp. 123-130、(1994) (ティー・アイ・シー)．

（英語）

[03] M. Tomitori: "2. Scanning tunneling microscopy”, pp. 7-14; S. Hasegawa and M. Tomitori: “18. Characterization of semiconducting materials”, pp. 133-137 Scanning probe microscopy roadmap 2005, edited by S. Morita, (2006) (Springer-Verlag, Berlin).

[02] T. Arai and M. Tomitori: "Bias dependence of NC-AFM images and tunneling current variations on semiconductor surfaces", Noncontact Atomic Force Microscopy, edited by S. Morita, R. Wiesendanger and E. Meyer, pp. 72-92 (2002) (Springer-Verlag, Berlin).

[01] M. Tomitori: "STM/STS Study of Semiconductor Clusters", Mesoscopic Materials and Clusters: Their Physical and Chemical Properties, edited by T. Arai, K. Mihama, K. Yamamoto and S. Sugano, Springer Series in Cluster Physics, pp. 419-427 (1999) (Springer-Verlag, Kodansha, Tokyo).

（編集）

[03] B. Bhushan, H. Fuchs, M. Tomitori (eds): Applied Scanning Probe Methods VIII, (2008) (Springer-Verlag, Berlin).

[02] B. Bhushan, H. Fuchs, M. Tomitori (eds): Applied Scanning Probe Methods IX, (2008) (Springer-Verlag, Berlin).
[01] B. Bhushan, H. Fuchs, M. Tomitori (eds): Applied Scanning Probe Methods X, (2008) (Springer-Verlag, Berlin).

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【解説】

[9] 富取正彦：講座 "走査型トンネル分光法の基礎"、顕微鏡 43 (1) (2008) 46-49.
[8] 新井豊子、富取正彦：トピックス "電圧印加非接触原子間力分光法による量子力学的共鳴相互作用の測定"、固体物理 40 (8)　(2005)　47-56.
[7] 堀秀信、山田省二、三谷忠興、藤原明比古、富取正彦、片山信一：特別記事"北陸先端科学技術大学院大学における先端的ナノテクノロジー研究（最終回）ナノフィジックス"、工業材料 50 (6) (2002) 60 - 64．
[6] 富取正彦："「百聞は一見に如かず？問いかけは限りなく」?走査型プローブ顕微鏡は何を見ているのか？?"、セラミックス誌 30 (10) (1995) 932-934．
[5] 富取正彦："ヘテロエピタキシー"、日本結晶学会誌 35 (2) (1993) 182．
[4] 富取正彦："走査型プローブ顕微鏡"、日本結晶学会誌 35 (3) (1993) 245-246．
[3] 西川治、富取正彦："原子レベルで見た表面構造"、金属 62 (8) (1992) 42-49．
[2] 富取正彦、西川治："STMによる半導体薄膜の成長観察"、島津科学計測ジャーナル、4 (3) (1992) 103-108．
[1] 富取正彦："走査型イオン伝導顕微鏡、用語解説" 、表面科学 11 (6) (1990) 382．

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【特許】

[3] "生体試料観察用走査型トンネル顕微鏡" 発明者：粉川良平、西川治、富取正彦特願平2-404211　(1990.12.20) 特公平7-056443　(1995.06.14) 特許第2035866号 (1996.03.28)
[2] "探針保持具" 発明者：粉川良平、西川治、富取正彦：特願平2-94698　(1990.04.09) 特開平3-291501　(1991.12.20) 特許第2732470号 (1997.12.26)
[1] 特許第2732470号 (1997.12.26)3 "走査型プローブ顕微鏡用探針の製造方法" 発明者：新井豊子、富取正彦：出願人：科学技術振興事業団特願2003-074375（2003.03.18）特開2004-279349（2004.10.07）特許第3753701号(2005.12.22) 特開平3-291501　(1991.12.20)

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【特許出願】

[4] "表面局在相互作用分光法" 発明者：新井豊子、富取正彦出願人：関西ＴＬＯ特願2000-217532（2000.07.18）特開2002-031592（2002.01.31） "
[3] ポジショニング機構、及び、それを用いた顕微鏡" 発明者：富取正彦、新井豊子、中榮穣出願人：北陸先端科学技術大学院大学特願2004-374829（2004.11.27） PCT出願 (2005.11.24) 　PCT/JP2005/021582, 05809439.2 “Positioning mechanism and microscope with the same” 米国、独国
[2] "シールド付き細線ケーブル及びその製造方法" 発明者：富取正彦、大久保芳彦出願人：独立行政法人科学技術振機構国立大学法人北陸先端科学技術大学院大学特願2008-087221（2008.3.28）
[1]“カンチレバー加熱機構、及び、それを用いたカンチレバーホルダ” 発明者：富取正彦、平出雅人出願人：北陸先端科学技術大学院大学特願2008-228950 (2008.9.5)

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【国際会議招待講演】

[7] MRS fall meeting 2007, Nov. 26-30, 2007, Boston, “Surface electron spectroscopy using scanning probe microscopy from field-emission to force interaction under a tip-sample bias voltage”.
[6] ICCE15（第15回国際複合材料ナノエンジニング学会）, July 15-21, 2007, Haikou, Hainan, China, “Nanoscale manipulation and characterization using SPM-based instruments” (key note lecture).
[5] 11th International Ceramics Congress & 4th Forum on New Materials (CIMTEC 2006), June 4-9, 2006, Acireale, Sicily, Italy, “Noncontact atomic force microscopy/spectroscopy with changing bias voltage for interaction analysis between two bodies”.
[4] 7th world multiconference on systemics, cybernetics and informatics (SCI2003), July 27-30, 2003, Orlando, Florida, USA, "Simultaneous measurements of surface topography and damping energy by noncontact atomic force microscopy".
[3] Practical surface analysis, PSA-01, Nov. 19-21, 2001, Nara, "Surface spectroscopy utilizing field electron emission from thermal-field treated tips in STM".
[2] JRCAT 2nd Workshop on scanning probe and nanoelectronics, Jan. 12-14, 1999, Tsukuba, "Application of thermal-field treatments to sharpening tips for STM and AFM".
[1] 1st Workshop on noncontact atomic force microscope, July 21-23, 1998, Osaka, "Cleaning processes and evaluation of tips in UHV for noncontact AFM".

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【海外でのセミナー】

[4]. Nanoscale imaging and manipulation using SPM-based instruments, Aix-Marseille Univ., Marseille, France, Sept. 22, 2008.

[3]. Nanoscale imaging and manipulation using SPM-based instruments, CRMC2-CNRS, Campus de Luminy, Marseille, France, Sept. 23, 2008.

[2]. Germanium nanostructures on Si surfaces observed by scanning probe microscopes - SPM tip evaluation and preparation techniques -, Universita degli studi di Rome “Tor Vergata”, Dipartimento di Fisica, Rome, Italy, July 5, 2004.

[1]. A trial using field electron emission to improve scanning probe microscopy and extend its application, Toronto Univ., Dept. of Chem., Canada, Aug. 15, 2002.

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